Electron and hole states in diluted magnetic semiconductor quantum dots

Kai Chang, S. S. Li, J. B. Xia, and F. M. Peeters
Phys. Rev. B 69, 235203 – Published 17 June 2004

Abstract

The electronic structure of a diluted magnetic semiconductor (DMS) quantum dot (QD) is studied within the framework of the effective-mass theory. We find that the energies of the electron with different spin orientation exhibit different behavior as a function of magnetic field at small magnetic fields. The energies of the hole decreases rapidly at low magnetic fields and saturate at higher magnetic field due to the spd exchange interaction between the carriers and the magnetic ions. The mixing effect of the hole states in the DMS QD can be tuned by changing the external magnetic field. An interesting crossing behavior of the hole ground state between the heavy-hole state and the light-hole state is found with variation of the QD radius. The strength of the interband optical transition for different circular polarization exhibts quite different behavior with increasing magnetic field and QD radius.

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  • Received 15 December 2003

DOI:https://doi.org/10.1103/PhysRevB.69.235203

©2004 American Physical Society

Authors & Affiliations

Kai Chang*, S. S. Li, and J. B. Xia

  • NLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China

F. M. Peeters

  • Department of Physics, University of Antwerp (Campus Drie Eiken), B-2610 Antwerpen, Belgium

  • *Electronic mail: kchang@red.semi.ac.cn

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Vol. 69, Iss. 23 — 15 June 2004

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