The presence of electrically active defects in 1.0-MeV-electron-irradiated silicon was observed using thermally stimulated capacitance measurements. Thermal-emission rates and activation energies of trapped majority carriers, impurity dependences, and annealing behavior of these defects were determined. The introduction of defects by annealing was observed. A total of 14 thermal-activation energies were measured. The oxygen-vacancy pair and the phosphorous-vacancy pair were correlated with thermal-activation energies of 174 and 471 meV through impurity dependences and annealing behavior. Comparison with other published data was made. The charge states were measured and it was found that the defects above midgap are acceptors; those below midgap are donors.

• Received 5 September 1972

DOI:https://doi.org/10.1103/PhysRevB.7.4587