We have theoretically studied the effect of an electric field on the energy levels of shallow donors and acceptors in silicon. An analysis of the electric field dependence of the lowest energy states in donors and acceptors is presented, taking the band structure into account. A description as hydrogenlike impurities was used for accurate computation of energy levels and lifetimes up to large (several $\mathrm{MV}∕\mathrm{m}$) electric fields. All results are discussed in connection with atomic scale electronics and solid state quantum computation.

• Received 17 October 2003

DOI:https://doi.org/10.1103/PhysRevB.70.035206