Ni $3d--\mathrm{B}\mathrm{N}\phantom{\rule{0.3em}{0ex}}\ensuremath{\pi}$ hybridization at the $h\text{\ensuremath{-}}\mathrm{B}\mathrm{N}∕\mathrm{Ni}(111)$ interface observed with core-level spectroscopies

Ni $3 d - B N π$ hybridization at the $h − B N ∕ Ni (111)$ interface observed with core-level spectroscopies

A. B. Preobrajenski, A. S. Vinogradov, and N. Mårtensson

Phys. Rev. B 70, 165404 – Published 11 October 2004

Abstract

The electronic structure of $h − B N$ films grown on the Ni(111) surface has been studied as a function of film thickness using the synchrotron radiation based spectroscopic techniques: soft x-ray absorption, core-level photoemission and resonant Auger spectroscopy. A manifestation of the strong orbital hybridization between Ni $3 d$ and $h − B N π$ states has been consistently observed in all spectra, implying a rather strong interfacial interaction between $h − B N$ and the substrate. In the B $1 s$ and N $1 s$ near-edge x-ray absorption fine structure of both bulk $h − B N$ and a single monolayer adsorbed on Ni(111) we observe spectral structures, which can be interpreted as a manifestation of the interlayer conduction-band states of $h − B N$ .