Growth, magic behavior, and electronic and vibrational properties of Cr-doped Si clusters

Hiroaki Kawamura, Vijay Kumar, and Yoshiyuki Kawazoe
Phys. Rev. B 70, 245433 – Published 29 December 2004

Abstract

Silicon clusters doped with a Cr atom have been studied using ab initio plane-wave ultrasoft pseudopotential and Gaussian methods. The most stable structures and magic clusters have been determined for SinCr (n=817) starting from many initial configurations. Our results show that for n=811 the number of Si atoms is not enough to surround a Cr atom fully and therefore the structures of these clusters are basket type in which the Cr atom has a bare part. A cage structure is formed for n=12. Cr@Si12 and Cr@Si15 show magic behavior. Among the charged clusters, anion of Cr@Si12 and cation of Cr@Si13 have high stability. The ionization potentials and electron affinities have been calculated. The dynamical stability of clusters is studied from vibrational calculations. The results of Raman activities and infrared intensities are presented for selected clusters. These can be used to identify the structures from experiments. The bonding nature in Cr@Sin clusters is found to change depending on the structure even when the cluster size is the same.

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  • Received 10 June 2004

DOI:https://doi.org/10.1103/PhysRevB.70.245433

©2004 American Physical Society

Authors & Affiliations

Hiroaki Kawamura

  • Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira Aoba-ku, Sendai 980-8577, Japan and New Frontiers Research Laboratories, Toray Industries, Inc., 1111 Tebiro, Kamakura, Kanagawa 248-8555, Japan

Vijay Kumar

  • Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira Aoba-ku, Sendai 980-8577, Japan and Dr. Vijay Kumar Foundation, 45 Bazaar Street, K. K. Nagar (West), Chennai 600 078, India

Yoshiyuki Kawazoe

  • Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira Aoba-ku, Sendai 980-8577, Japan

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Issue

Vol. 70, Iss. 24 — 15 December 2004

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