Voltage control of the magnetic properties of charged semiconductor quantum dots containing magnetic ions

J. I. Climente, M. Korkusiński, P. Hawrylak, and J. Planelles
Phys. Rev. B 71, 125321 – Published 21 March 2005

Abstract

We describe a model device allowing voltage control of the magnetic properties of magnetic ions in III-V self-assembled semiconductor quantum dots. The applied voltage, combined with Coulomb blockade, allows the control of the number of holes in the quantum dot. The spins of the holes interact with the spins of the magnetic ions via spd exchange interactions. The spectrum of a Mn ion in a p-type InAs quantum disk in a magnetic field is calculated as a function of the number of holes described by the Luttinger-Kohn Hamiltonian. For a neutral Mn acceptor, the spin of the hole leads to an effective magnetic field which strongly modifies the magnetization of the ion. The magnetization can be modified further by charging the dot with an additional hole. The interacting holes form a singlet parity ground state, suppress the effective field and modify the magnetic moment of the charged complex.

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  • Received 27 October 2004

DOI:https://doi.org/10.1103/PhysRevB.71.125321

©2005 American Physical Society

Authors & Affiliations

J. I. Climente1,2, M. Korkusiński1, P. Hawrylak1, and J. Planelles2

  • 1Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada K1A 0R6
  • 2Departament de Ciències Experimentals, Universitat Jaume I, Box 224, E-12080 Castelló, Spain

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Vol. 71, Iss. 12 — 15 March 2005

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