Zitterbewegung and its effects on electrons in semiconductors

Wlodek Zawadzki
Phys. Rev. B 72, 085217 – Published 19 August 2005

Abstract

An analogy between the band structure of narrow gap semiconductors and the Dirac equation for relativistic electrons in vacuum is used to demonstrate that semiconductor electrons experience a Zitterbewegung (trembling motion). Its frequency is ωZEg and its amplitude is λZ, where λZ=m0*u corresponds to the Compton wavelength in vacuum (Eg is the energy gap, m0* is the effective mass, and u1.3×108cms). Once the electrons are described by a two-component spinor for a specific energy band there is no Zitterbewegung but the electrons should be treated as extended objects of size λZ. The magnitude of λZ in narrow gap semiconductors can be as large as 70Å. Possible consequences of the above predictions are indicated.

  • Figure
  • Received 16 November 2004

DOI:https://doi.org/10.1103/PhysRevB.72.085217

©2005 American Physical Society

Authors & Affiliations

Wlodek Zawadzki

  • Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, 02-668 Warsaw, Poland

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Issue

Vol. 72, Iss. 8 — 15 August 2005

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