Temperature evolution of the relaxor dynamics in Pb(Zn13Nb23)O3: A critical Raman analysis

J. Toulouse, F. Jiang, O. Svitelskiy, W. Chen, and Z.-G. Ye
Phys. Rev. B 72, 184106 – Published 22 November 2005

Abstract

At the heart of the relaxor behavior lies the development of mesoscopic or intermediate range order and the low frequency or relaxation dynamics associated with it. To investigate this development, we have measured the Raman spectra of a Pb(Zn13Nb23)O3 (PZN) single crystal over a wide temperature range from 1000Kto150K. The spectra are analyzed using several different physical models, focusing particularly on the low frequency part. Both relaxation and coupled phonon dynamics are identified. The evolution of the relaxor dynamics is marked by three characteristic temperatures, Burns temperature, TB650K, and two other temperatures, Td470K and Tf340K, which together define four major ranges. Combining the fitting results from the Raman spectra and other experimental results in PZN, we describe the relaxor dynamics in these four ranges, in terms of the strength and lifetime of the correlations between off-center ions. Relating the dynamics observed in PZN to that in KTa1xNbxO3 (KTN), we develop a microscopic model based on the coexistence of a fast and a slow motion of the off-center Pb and Nb ions which accounts for both types of dynamics (coupled phonon and relaxational) between TB and Tf, and show evidence for a series of local phase transitions taking place below Td.

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  • Received 4 August 2004

DOI:https://doi.org/10.1103/PhysRevB.72.184106

©2005 American Physical Society

Authors & Affiliations

J. Toulouse*, F. Jiang, and O. Svitelskiy

  • Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015, USA

W. Chen and Z.-G. Ye

  • Department of Chemistry, Simon Fraser University, Vancouver, British Columbia, Canada V58 1S6

  • *Electronic address: jt02@lehigh.edu
  • Present address: Department of Geosciences, Princeton University, Princeton, NJ 08544, USA.
  • Present address: National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32310, USA.

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Issue

Vol. 72, Iss. 18 — 1 November 2005

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