Spin susceptibility of a two-dimensional electron system in GaAs towards the weak interaction region

Y.-W. Tan, J. Zhu, H. L. Stormer, L. N. Pfeiffer, K. W. Baldwin, and K. W. West
Phys. Rev. B 73, 045334 – Published 31 January 2006

Abstract

We determine the spin susceptibility χ in the weak interaction regime of a tunable, high quality, two-dimensional electron system in a GaAsAlGaAs heterostructure. The band structure effects, modifying mass and g-factor, are carefully taken into accounts since they become appreciable for the large electron densities of the weak interaction regime. When properly normalized, χ decreases monotonically from 3 to 1.1 with increasing density over our experimental range from 0.1 to 4×1011cm2. In the high density limit, χ tends correctly towards χ1 and compare well with recent theory.

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  • Received 13 April 2005

DOI:https://doi.org/10.1103/PhysRevB.73.045334

©2006 American Physical Society

Authors & Affiliations

Y.-W. Tan1, J. Zhu1, H. L. Stormer1,2,3, L. N. Pfeiffer3, K. W. Baldwin3, and K. W. West3

  • 1Department of Physics, Columbia University, New York, New York 10027, USA
  • 2Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USA
  • 3Bell Labs, Lucent Technologies, Murray Hill, New Jersey 07974, USA

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Issue

Vol. 73, Iss. 4 — 15 January 2006

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