Detection of terahertz radiation in gated two-dimensional structures governed by dc current

D. Veksler, F. Teppe, A. P. Dmitriev, V. Yu. Kachorovskii, W. Knap, and M. S. Shur
Phys. Rev. B 73, 125328 – Published 21 March 2006

Abstract

We present theoretical and experimental studies of the direct current effect on the detection of subterahertz and terahertz radiation in gated two-dimensional structures. We developed a theory of the current-driven detection both for resonant case, when the fundamental frequency of plasma oscillation is large compared to inverse scattering time, ω0τ1, and for the nonresonant case, ω0τ1, when the plasma oscillations are damped. We predict that, in the nonresonant case, even a very small dc current would increase the detection amplitude up to two orders of magnitude. Physically, this increase is related to an abrupt transition from the linear to saturation region near the knee of the current-voltage characteristic. When the current increases up to the saturation value, the electron concentration near the drain becomes very low and can be strongly affected by a small external field. As a consequence, the two-dimensional channel becomes extremely sensitive to external perturbations. In the resonant case, the detection amplitude has maxima when the radiation frequency is equal to fundamental plasma frequency and its harmonics. We predict that the effective linewidths of the respective resonances would decrease with the increasing current. Physically, this happens because dc current shifts the system towards the plasma wave instability. At some critical current value, the width corresponding to the fundamental frequency would turn to zero, indicating the onset of plasma waves generation. Our experimental measurements performed on GaAs HEMT confirm the theoretical predictions.

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  • Received 24 May 2005

DOI:https://doi.org/10.1103/PhysRevB.73.125328

©2006 American Physical Society

Authors & Affiliations

D. Veksler1, F. Teppe1,2, A. P. Dmitriev1,2,3, V. Yu. Kachorovskii1,2,3, W. Knap1,2, and M. S. Shur1

  • 1Rensselaer Polytechnic Institute, 110, 8th Street, Troy, New York 12180, USA
  • 2GES CNRS-Universite Montpellier 2, UMR 5650, 34900 Montpellier, France
  • 3A.F. Ioffe Physical-Technical Institute, 26 Polytechnicheskaya Street, Saint Petersburg, 194021, Russia

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Issue

Vol. 73, Iss. 12 — 15 March 2006

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