Figure 1

Schematic cross-sectional view of a multiterminal SINIS device.Reuse & Permissions

Figure 2

(a) Current-voltage characteristics (CVC) of a multiterminal SINIS device (1–3) measured at $1.85\mathrm{K}$ for configurations 1–3, shown in (b). Arrows (down and up) denote “gap-difference” $\left(S_1\right)$ and “gap-sum” $\left(S_2\right)$ features in curve 3. Curve 4 is the CVC of a two-terminal SINIS junction (measured at $1.85\mathrm{K}$) using configuration 4 in (b).Reuse & Permissions

Figure 3

The unperturbed $I_f\left(V_f\right)$ curve of the N layer in device 1 in zero magnetic field (curve 1) and in an applied magnetic field of $35\mathrm{Oe}$ (curve 2). Curve 3 is the $I_f\left(V_f\right)$ curve of the N layer in device 2 which has microshorts between N and S at one edge of the bottom NIS junction; $T=1.85\mathrm{K}$. Upper inset: $I_{\mathrm{cf}}\left(T\right)$ dependence of N layer in device 3. Lower inset: schematic of the measurement configuration.Reuse & Permissions

Figure 4

(a) A family of CVC, $I_f\left(V_f\right)$, for the middle Al layer at various injection levels, $I_{\mathrm{inj}}$. Curves from top to bottom are for $I_{\mathrm{inj}}=-8.0$, $-4.0$, $-3.0$, $-2.0$, $-1.0$, $-0.2$, 0.0, $+0.2$, $+1.0$, $+2.0$, $+3.0$, $+4.0$, and $+8.0\mathrm{mA}$, respectively, and are shifted from each other by $0.02\mathrm{mA}$ along the current axis for clarity. Positive directions for currents $I_{\mathrm{inj}}$ and $I_f$ are defined in the inset. The differential resistance of the middle Al layer under various $I_{\mathrm{inj}}$ levels is shown for zero applied magnetic field (b) and for an applied magnetic field of $35\mathrm{Oe}$ (c). $d{V}_f∕d{I}_f\left(V_f\right)$ curves from bottom to top (successively shifted upward from each other for clarity) are for $I_{\mathrm{inj}}=0$, 0.2, 0.4, 0.6, 0.8, 1.0, 2.0, 2.2, 2.5, 2.8, 3.0, 3.5, 4.0, 6.0, and $8.0\mathrm{mA}$, respectively.Reuse & Permissions