Anomaly in the excitation dependence of the optical gain of semiconductor quantum dots

M. Lorke, W. W. Chow, T. R. Nielsen, J. Seebeck, P. Gartner, and F. Jahnke
Phys. Rev. B 74, 035334 – Published 26 July 2006

Abstract

Optical gain behavior of semiconductor quantum dots is studied within a quantum-kinetic theory, with carrier-carrier and carrier-phonon scattering treated using renormalized quasiparticle states. For inhomogeneously broadened samples, we found the excitation dependence of gain to be basically similar to quantum-well and bulk systems. However, for a high quality sample, our theory predicts the possibility of a decreasing peak gain with increasing carrier density. This anomaly can be attributed to the delicate balance between state filling and dephasing.

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  • Received 2 February 2006

DOI:https://doi.org/10.1103/PhysRevB.74.035334

©2006 American Physical Society

Authors & Affiliations

M. Lorke1,*, W. W. Chow2, T. R. Nielsen1, J. Seebeck1, P. Gartner1, and F. Jahnke1

  • 1Institute for Theoretical Physics, University of Bremen, 28334 Bremen, Germany
  • 2Semiconductor Materials and Device Science Department, Sandia National Laboratories, Albuquerque, New Mexico 87185-0601, USA

  • *Electronic address: www.itp.uni-bremen.de

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Vol. 74, Iss. 3 — 15 July 2006

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