Origin of ferromagnetism in semiconducting (In1xyFexCuy)2O3σ

Z. G. Yu, Jun He, Shifa Xu, Qizhen Xue, O. M. J. van’t Erve, B. T. Jonker, M. A. Marcus, Young K. Yoo, Shifan Cheng, and Xiao-dong Xiang
Phys. Rev. B 74, 165321 – Published 19 October 2006

Abstract

We systematically measure and analyze x-ray absorption fine structure and the anomalous Hall effect of recently discovered room-temperature ferromagnetic semiconductor thin films, (In1xyFexCuy)2O3σ. The x-ray fine structure demonstrates that divalent Fe ions exist in ferromagnetic samples but not in nonmagnetic ones, suggesting a mobile-electron-mediated ferromagnetism. The anomalous Hall behavior is found to be consistent with that of ferromagnets, in which carriers are delocalized, but qualitatively different from that of double-exchange manganites, in which carriers are bound to magnetic ions, confirming that the ferromagnetism in (In1xyFexCuy)2O3σ is mediated by mobile electrons.

    • Received 31 March 2005

    DOI:https://doi.org/10.1103/PhysRevB.74.165321

    ©2006 American Physical Society

    Authors & Affiliations

    Z. G. Yu1, Jun He1, Shifa Xu1, Qizhen Xue2, O. M. J. van’t Erve3, B. T. Jonker3, M. A. Marcus4, Young K. Yoo2, Shifan Cheng2, and Xiao-dong Xiang1,2,*

    • 1SRI International, 333 Ravenswood Avenue, Menlo Park, California 94025, USA
    • 2Intematix Corporation, 46410 South Fremont Boulevard, Fremont, California 94538, USA
    • 3Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA
    • 4Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA

    • *Corresponding author, xdxiang@intematix.com

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    Issue

    Vol. 74, Iss. 16 — 15 October 2006

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