Electronic transport in graphene: A semiclassical approach including midgap states

T. Stauber, N. M. R. Peres, and F. Guinea
Phys. Rev. B 76, 205423 – Published 20 November 2007

Abstract

Using the semiclassical Boltzmann theory, we calculate the conductivity as a function of the carrier density. We include the scattering from charged impurities but conclude that the estimated impurity density is too low in order to explain the experimentally observed mobilities. We thus propose an additional scattering mechanism involving midgap states, which leads to a similar k dependence of the relaxation time as charged impurities. The proposed scattering mechanism can account for the experimental findings such as the sublinear behavior of the conductivity versus gate voltage and the increase of the minimal conductivity for clean samples. We also discuss temperature dependent scattering due to acoustic phonons.

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  • Received 19 July 2007

DOI:https://doi.org/10.1103/PhysRevB.76.205423

©2007 American Physical Society

Authors & Affiliations

T. Stauber1, N. M. R. Peres2, and F. Guinea1

  • 1Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049 Madrid, Spain
  • 2Center of Physics and Department of Physics, University of Minho, P-4710-057 Braga, Portugal

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Issue

Vol. 76, Iss. 20 — 15 November 2007

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