Phonon renormalization in doped bilayer graphene

A. Das, B. Chakraborty, S. Piscanec, S. Pisana, A. K. Sood, and A. C. Ferrari
Phys. Rev. B 79, 155417 – Published 13 April 2009

Abstract

We report phonon renormalization in bilayer graphene as a function of doping. The Raman G peak stiffens and sharpens for both electron and hole doping as a result of the nonadiabatic Kohn anomaly at the Γ point. The bilayer has two conduction and valence subbands, with splitting dependent on the interlayer coupling. This gives a change of slope in the variation of G peak position with doping which allows a direct measurement of the interlayer coupling strength.

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  • Received 10 July 2008

DOI:https://doi.org/10.1103/PhysRevB.79.155417

©2009 American Physical Society

Authors & Affiliations

A. Das1, B. Chakraborty1, S. Piscanec2, S. Pisana2, A. K. Sood1,*, and A. C. Ferrari2,†

  • 1Department of Physics, Indian Institute of Science, Bangalore 560012, India
  • 2Department of Engineering, Cambridge University, Cambridge CB3 0FA, United Kingdom

  • *asood@physics.iisc.ernet.in
  • acf26@eng.cam.ac.uk

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Issue

Vol. 79, Iss. 15 — 15 April 2009

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