Electronic Energy Levels of Hydrogen Adsorbed on Tungsten

B. Feuerbacher and B. Fitton
Phys. Rev. B 8, 4890 – Published 15 November 1973
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Abstract

The electronic energy levels of hydrogen adsorbed on three low-index planes of tungsten have been studied by a directional photoemission technique for coverages between 0.01 and 1 monolayer. A number of relatively sharp resonance levels are observed, which show half-widths down to 0.5 eV. For the (100) face, a single high-coverage state evolves from multiple low-coverage states, while on the (110) face two states appear to build up sequentially. No pronounced coverage dependence is observed for the (111) face.

  • Received 30 April 1973

DOI:https://doi.org/10.1103/PhysRevB.8.4890

©1973 American Physical Society

Authors & Affiliations

B. Feuerbacher and B. Fitton

  • Surface Physics Division, European Space Research Organization, Noordwijk, Holland

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Issue

Vol. 8, Iss. 10 — 15 November 1973

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