Vacancy defect and defect cluster energetics in ion-implanted ZnO

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Vacancy defect and defect cluster energetics in ion-implanted ZnO

Yufeng Dong, F. Tuomisto, B. G. Svensson, A. Yu. Kuznetsov, and Leonard J. Brillson

Phys. Rev. B 81, 081201(R) – Published 1 February 2010

Abstract

We have used depth-resolved cathodoluminescence, positron annihilation, and surface photovoltage spectroscopies to determine the energy levels of Zn vacancies and vacancy clusters in bulk ZnO crystals. Doppler broadening-measured transformation of Zn vacancies to vacancy clusters with annealing shifts defect energies significantly lower in the ZnO band gap. Zn and corresponding O vacancy-related depth distributions provide a consistent explanation of depth-dependent resistivity and carrier-concentration changes induced by ion implantation.

Received 8 January 2010

DOI:https://doi.org/10.1103/PhysRevB.81.081201

Authors & Affiliations

Yufeng Dong^1,*, F. Tuomisto², B. G. Svensson³, A. Yu. Kuznetsov³, and Leonard J. Brillson^1,4,5

¹Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
²Department of Applied Physics, Helsinki University of Technology, P.O. Box 1100, Helsinki 02015 TKK, Finland
³Department of Physics, University of Oslo, P.O. Box 1048, Blindern, 0316 Oslo, Norway
⁴Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA
⁵Center for Materials Research, The Ohio State University, Columbus, Ohio 43210, USA

^*dong.70@osu.edu

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Issue

Vol. 81, Iss. 8 — 15 February 2010

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