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Surface-induced charge state conversion of nitrogen-vacancy defects in nanodiamonds

L. Rondin, G. Dantelle, A. Slablab, F. Grosshans, F. Treussart, P. Bergonzo, S. Perruchas, T. Gacoin, M. Chaigneau, H.-C. Chang, V. Jacques, and J.-F. Roch
Phys. Rev. B 82, 115449 – Published 28 September 2010

Abstract

We present a study of the charge state conversion of single nitrogen-vacancy (NV) defects hosted in nanodiamonds (NDs). We first show that the proportion of negatively charged NV defects, with respect to its neutral counterpart NV0, decreases with the size of the ND. We then propose a simple model based on a layer of electron traps located at the ND surface which is in good agreement with the recorded statistics. By using thermal oxidation to remove the shell of amorphous carbon around the NDs, we demonstrate a significant increase in the proportion of NV defects in 10 nm NDs. These results are invaluable for further understanding, control, and use of the unique properties of negatively charged NV defects in diamond.

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  • Received 20 August 2010

DOI:https://doi.org/10.1103/PhysRevB.82.115449

©2010 American Physical Society

Authors & Affiliations

L. Rondin1, G. Dantelle1,2,*, A. Slablab1, F. Grosshans1, F. Treussart1, P. Bergonzo3, S. Perruchas2, T. Gacoin2, M. Chaigneau4, H.-C. Chang5, V. Jacques1,†, and J.-F. Roch1

  • 1Laboratoire de Photonique Quantique et Moléculaire, ENS Cachan, UMR CNRS 8537, F-94235 Cachan, France
  • 2Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique, UMR CNRS 7643, F-91128 Palaiseau, France
  • 3LIST, Diamond Sensors Laboratory, CEA, F-91191 Gif-Sur-Yvette, France
  • 4Laboratoire de Physique des Interfaces et Couches Minces, Ecole Polytechnique, UMR CNRS 7647, F-91128 Palaiseau, France
  • 5Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan

  • *geraldine.dantelle@polytechnique.edu
  • vjacques@lpqm.ens-cachan.fr

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Issue

Vol. 82, Iss. 11 — 15 September 2010

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