Effect of selenium deficiency on the thermoelectric properties of n-type In4Se3x compounds

G. H. Zhu, Y. C. Lan, H. Wang, G. Joshi, Q. Hao, G. Chen, and Z. F. Ren
Phys. Rev. B 83, 115201 – Published 4 March 2011

Abstract

Thermoelectric properties of dense bulk polycrystalline In4Se3x (x = 0, 0.25, 0.5, 0.65, and 0.8) compounds are investigated. A peak dimensionless thermoelectric figure of merit (ZT) of about 1 is achieved for x = 0.65 and 0.8. The peak ZT is about 50% higher than the previously reported highest value for polycrystalline In4Se3x compounds. Our In4Se3x samples were prepared by ball milling and hot pressing. We show that it is possible to effectively control the electrical conductivity and thermal conductivity by controlling selenium (Se) deficiency x. The ZT enhancement is mainly attributed to the thermal conductivity reduction due to the increased phonon scattering by Se deficiency, defects, and nanoscale inclusions in the ball-milled and hot-pressed dense bulk In4Se3x samples.

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  • Received 22 November 2010

DOI:https://doi.org/10.1103/PhysRevB.83.115201

© 2011 American Physical Society

Authors & Affiliations

G. H. Zhu1, Y. C. Lan1, H. Wang1, G. Joshi1, Q. Hao2, G. Chen2,*, and Z. F. Ren1,†

  • 1Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, USA
  • 2Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

  • *gchen2@mit.edu
  • renzh@bc.edu

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Vol. 83, Iss. 11 — 15 March 2011

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