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Stability of the Bi2Se3(111) topological state: Electron-phonon and electron-defect scattering

Richard C. Hatch, Marco Bianchi, Dandan Guan, Shining Bao, Jianli Mi, Bo Brummerstedt Iversen, Louis Nilsson, Liv Hornekær, and Philip Hofmann
Phys. Rev. B 83, 241303(R) – Published 14 June 2011
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Abstract

The electron dynamics of the topological surface state on Bi2Se3(111) is investigated by temperature-dependent angle-resolved photoemission. The electron-phonon coupling strength is determined in a spectral region for which only intraband scattering involving the topological surface band is possible. The electron-phonon coupling constant is found to be λ=0.25(5), more than an order of magnitude higher than the corresponding value for intraband scattering in the noble-metal surface states. The stability of the topological state with respect to surface irregularities was also tested by introducing a small concentration of surface defects via ion bombardment. It is found that, in contrast to the bulk states, the topological state can no longer be observed in the photoemission spectra, and this cannot merely be attributed to surface defect-induced momentum broadening.

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  • Received 3 March 2011

DOI:https://doi.org/10.1103/PhysRevB.83.241303

©2011 American Physical Society

Authors & Affiliations

Richard C. Hatch1, Marco Bianchi1, Dandan Guan1,2, Shining Bao2, Jianli Mi3, Bo Brummerstedt Iversen3, Louis Nilsson1, Liv Hornekær1, and Philip Hofmann1

  • 1Department of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, DK-8000 Aarhus C, Denmark
  • 2Department of Physics, Zhejiang University, Hangzhou, 310027, China
  • 3Department of Chemistry, Center for Materials Crystallography, Interdisciplinary Nanoscience Center, Aarhus University, DK-8000 Aarhus C, Denmark

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Issue

Vol. 83, Iss. 24 — 15 June 2011

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