Abstract
We studied the defects of BiSe generated from Bridgman growth of stoichiometric and nonstoichiometric self-fluxes. Growth habit, lattice size, and transport properties are strongly affected by the types of defects generated. Major defect types of the Bi antisite and partial Bi-layer intercalation are identified through combined studies of direct atomic-scale imaging with scanning transmission electron microscopy in conjunction with energy-dispersive x-ray spectroscopy, x-ray diffraction, and Hall effect measurements. We propose a consistent explanation to the origin of defect type, growth morphology, and transport property.
- Received 8 June 2012
DOI:https://doi.org/10.1103/PhysRevB.86.081104
©2012 American Physical Society