Raman spectroscopy of shear and layer breathing modes in multilayer MoS2

X. Zhang, W. P. Han, J. B. Wu, S. Milana, Y. Lu, Q. Q. Li, A. C. Ferrari, and P. H. Tan
Phys. Rev. B 87, 115413 – Published 13 March 2013

Abstract

We study by Raman scattering the shear and layer breathing modes in multilayer MoS2. These are identified by polarization measurements and symmetry analysis. Their positions change significantly with the number of layers, with different scaling for odd and even layers. A chain model can explain the results, with general applicability to any layered material, allowing a reliable diagnostic of their thickness.

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  • Received 23 January 2013

DOI:https://doi.org/10.1103/PhysRevB.87.115413

©2013 American Physical Society

Authors & Affiliations

X. Zhang1, W. P. Han1, J. B. Wu1, S. Milana1,2, Y. Lu1, Q. Q. Li1, A. C. Ferrari2,*, and P. H. Tan1,†

  • 1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 OFA, United Kingdom

  • *acf26@eng.cam.ac.uk
  • phtan@semi.ac.cn

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Vol. 87, Iss. 11 — 15 March 2013

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