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Self-assembly of nanoscale lateral segregation profiles

R. Stania, W. Heckel, I. Kalichava, C. Bernard, T. C. Kerscher, H. Y. Cun, P. R. Willmott, B. Schönfeld, J. Osterwalder, S. Müller, and T. Greber
Phys. Rev. B 93, 161402(R) – Published 7 April 2016
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Abstract

The surface segregation profile of an intermetallic compound becomes vertically and laterally modulated upon epitaxial growth of a single-layer hexagonal boron nitride (h-BN) nanomesh. h-BN on PtRh(111) forms an 11-on-10 superhoneycomb, such as that on Rh(111) [Corso et al., Science 303, 217 (2004)], though with a smaller lattice constant of 2.73 nm. X-ray photoelectron diffraction shows that the h-BN layer reduces the Pt enrichment of the first layer by promoting site swapping of about 10 Pt-Rh pairs within the 10×10 unit cell between the first and second layers. This segregation profile is confirmed by density-functional-theory-based cluster-expansion calculations. Generally, a strong modulation of the h-BN bonding strength and a higher affinity to one of the constituents leads to self-assembly of top layer patches underneath the nanomesh pores.

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  • Received 27 November 2015
  • Revised 26 January 2016

DOI:https://doi.org/10.1103/PhysRevB.93.161402

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

R. Stania1,2,*, W. Heckel3, I. Kalichava2, C. Bernard1, T. C. Kerscher3, H. Y. Cun1, P. R. Willmott2, B. Schönfeld4, J. Osterwalder1, S. Müller3, and T. Greber1

  • 1Physik-Institut, Universität Zürich, Winterthurerstrasse 190, 8057 Zürich, Switzerland
  • 2Paul Scherrer Institut, 5232 Villigen PSI, Switzerland
  • 3Hamburg University of Technology, Denickestraße 15, 21073 Hamburg, Germany
  • 4Laboratory of Metal Physics and Technology, Department of Materials, ETH Zürich, 8093 Zürich, Switzerland

  • *Corresponding author: rostania@physik.uzh.ch

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Issue

Vol. 93, Iss. 16 — 15 April 2016

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