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Crystalline and electronic structure of single-layer TaS2

Charlotte E. Sanders, Maciej Dendzik, Arlette S. Ngankeu, Andreas Eich, Albert Bruix, Marco Bianchi, Jill A. Miwa, Bjørk Hammer, Alexander A. Khajetoorians, and Philip Hofmann
Phys. Rev. B 94, 081404(R) – Published 3 August 2016
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Abstract

Single-layer TaS2 is epitaxially grown on Au(111) substrates. The resulting two-dimensional crystals adopt the 1H polymorph. The electronic structure is determined by angle-resolved photoemission spectroscopy and found to be in excellent agreement with density functional theory calculations. The single-layer TaS2 is found to be strongly n doped, with a carrier concentration of 0.3(1) extra electrons per unit cell. No superconducting or charge density wave state is observed by scanning tunneling microscopy at temperatures down to 4.7 K.

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  • Received 20 June 2016

DOI:https://doi.org/10.1103/PhysRevB.94.081404

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Charlotte E. Sanders1, Maciej Dendzik1, Arlette S. Ngankeu1, Andreas Eich2, Albert Bruix1, Marco Bianchi1, Jill A. Miwa1, Bjørk Hammer1, Alexander A. Khajetoorians2, and Philip Hofmann1,*

  • 1Department of Physics and Astronomy, Interdisciplinary Nanoscience Center (iNANO), Aarhus University, 8000 Aarhus C, Denmark
  • 2Institute for Molecules and Materials, Radboud University, 6525 AJ Nijmegen, The Netherlands

  • *philip@phys.au.dk

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Issue

Vol. 94, Iss. 8 — 15 August 2016

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