Insights into the dielectric response of ferroelectric relaxors from statistical modeling

J. Liu, F. Li, Y. Zeng, Z. Jiang, L. Liu, D. Wang, Z.-G. Ye, and C.-L. Jia
Phys. Rev. B 96, 054115 – Published 22 August 2017

Abstract

Ferroelectric relaxors are complex materials with distinct properties. The understanding of their dielectric susceptibility, which strongly depends on both temperature and probing frequency, has been a challenge for researchers for many years. Here we report a macroscopic and phenomenological approach based on statistical modeling to investigate how the dielectric response of a relaxor depends on temperature. Employing the Maxwell-Boltzmann distribution and considering temperature-dependent dipolar orientational polarizability, we propose a minimum statistical model and specific equations to understand and fit numerical and experimental dielectric responses versus temperature. We show that the proposed formula can successfully fit the dielectric response of typical relaxors, including Ba(Zr,Ti)O3,0.87Pb(Zn1/3Nb2/3)O30.13PbTiO3,0.95Pb(Mg1/3Nb2/3)O30.05Pb(Zr0.53Ti0.47)O3, and Bi-based compounds, which demonstrates the general applicability of this approach.

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  • Received 17 January 2017
  • Revised 9 June 2017

DOI:https://doi.org/10.1103/PhysRevB.96.054115

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

J. Liu1, F. Li2, Y. Zeng3, Z. Jiang4,5, L. Liu6, D. Wang4,*, Z.-G. Ye7,2, and C.-L. Jia4,8

  • 1State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049 China
  • 2Electronic Materials Research Laboratory-Key Laboratory of the Ministry of Education, International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China
  • 3School of Materials Science and Engineering, State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, No. 1, Qinghua Yuan, Beijing 100084, China
  • 4School of Microelectronics and State Key Laboratory for Mechanical Behaviour of Materials, Xi'an Jiaotong University, Xi'an 710049, China
  • 5Department of Physics and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
  • 6College of Materials Science and Engineering, Guilin Univeristy of Techonology, Guilin 541004, China
  • 7Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, British Columbia, V5A 1A6, Canada
  • 8Peter Grünberg Institute, Ernst Ruska Center for Microscopy and Spectroscopy with Electrons, Research Center Jülich, D-52425 Jülich, Germany

  • *dawei.wang@mail.xjtu.edu.cn

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Issue

Vol. 96, Iss. 5 — 1 August 2017

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