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Stacking tunable interlayer magnetism in bilayer CrI3

Peiheng Jiang, Cong Wang, Dachuan Chen, Zhicheng Zhong, Zhe Yuan, Zhong-Yi Lu, and Wei Ji
Phys. Rev. B 99, 144401 – Published 1 April 2019

Abstract

Diverse interlayer tunability of physical properties of two-dimensional layers mostly lies in the covalent-like quasibonding that is significant in electronic structures but rather weak for energetics. Such characteristics result in various stacking orders that are energetically comparable but may significantly differ in terms of electronic structures, e.g., magnetism. Inspired by several recent experiments showing interlayer antiferromagnetically coupled CrI3 bilayers, we carried out first-principles calculations for CrI3 bilayers. We found that the antiferromagnetic coupling results from a different stacking order with the C2/m space group symmetry, rather than the graphene-like one with R3¯ as previously believed. Moreover, we demonstrated that the intra- and interlayer couplings in CrI3 bilayer are governed by two different mechanisms, namely ferromagnetic superexchange and direct-exchange interactions, which are largely decoupled because of their significant difference in strength at the strong- and weak-interaction limits. This allows the much weaker interlayer magnetic coupling to be more feasibly tuned by stacking orders solely. Given the fact that interlayer magnetic properties can be altered by changing crystal structure with different stacking orders, our work opens a paradigm for tuning interlayer magnetic properties with the freedom of stacking order in two-dimensional layered materials.

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  • Received 10 July 2018
  • Revised 13 March 2019

DOI:https://doi.org/10.1103/PhysRevB.99.144401

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Peiheng Jiang1,*, Cong Wang2,*, Dachuan Chen1, Zhicheng Zhong1,3,†, Zhe Yuan4, Zhong-Yi Lu2, and Wei Ji2,†

  • 1Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, P.R. China
  • 2Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, P.R. China
  • 3China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
  • 4The Center for Advanced Quantum Studies and Department of Physics, Beijing Normal University, Beijing 100875, P.R. China

  • *These authors contributed equally to this work.
  • Authors to whom correspondence should be addressed: zhong@nimte.ac.cn; wji@ruc.edu.cn

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Issue

Vol. 99, Iss. 14 — 1 April 2019

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