Quantitative phase-field modeling for dilute alloy solidification involving diffusion in the solid

Munekazu Ohno and Kiyotaka Matsuura
Phys. Rev. E 79, 031603 – Published 5 March 2009

Abstract

An antitrapping current scheme for quantitative phase-field model [A. Karma, Phys. Rev. Lett. 87, 115701 (2001)] is extended to solidification process in a dilute binary alloy system involving diffusion in the solid. It is demonstrated in an asymptotic analysis that in the case of an arbitrary value of the solid diffusivity, five types of constraints exist between interpolating functions used in the phase-field model, which need to be satisfied simultaneously to eliminate all anomalous interface effects. Then, the authors present an appropriate form of the antitrapping current term for the two-sided case to remove all the spurious effects. The convergence test of the output with respect to the interface thickness was carried out for the isothermal dendrite growth process, which demonstrates an excellent performance of the present model.

    • Received 2 December 2008

    DOI:https://doi.org/10.1103/PhysRevE.79.031603

    ©2009 American Physical Society

    Authors & Affiliations

    Munekazu Ohno and Kiyotaka Matsuura

    • Division of Materials Science and Engineering, Graduate School of Engineering, Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan

    Article Text (Subscription Required)

    Click to Expand

    References (Subscription Required)

    Click to Expand
    Issue

    Vol. 79, Iss. 3 — March 2009

    Reuse & Permissions
    Access Options
    Author publication services for translation and copyediting assistance advertisement

    Authorization Required


    ×
    ×

    Images

    ×

    Sign up to receive regular email alerts from Physical Review E

    Log In

    Cancel
    ×

    Search


    Article Lookup

    Paste a citation or DOI

    Enter a citation
    ×