Theory for Spin Diffusion in Disordered Organic Semiconductors

P. A. Bobbert, W. Wagemans, F. W. A. van Oost, B. Koopmans, and M. Wohlgenannt

Phys. Rev. Lett. 102, 156604 – Published 17 April 2009

Abstract

We present a theory for spin diffusion in disordered organic semiconductors, based on incoherent hopping of a charge carrier and coherent precession of its spin in an effective magnetic field, composed of the random hyperfine field of hydrogen nuclei and an applied magnetic field. From Monte Carlo simulations and an analysis of the waiting-time distribution of the carrier we predict a surprisingly weak temperature dependence, but a considerable magnetic-field dependence of the spin-diffusion length. We show that both predictions are in agreement with experiments on organic spin valves.

Received 2 January 2009

DOI:https://doi.org/10.1103/PhysRevLett.102.156604

Authors & Affiliations

P. A. Bobbert¹, W. Wagemans¹, F. W. A. van Oost¹, B. Koopmans¹, and M. Wohlgenannt^2,*

¹Department of Applied Physics, Technische Universiteit Eindhoven, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
²Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242-1479, USA

^*markus-wohlgenannt@uiowa.edu

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Issue

Vol. 102, Iss. 15 — 17 April 2009

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