Boosting Electronic Transport in Carbon Nanotubes by Isotopic Disorder

Niels Vandecasteele, Michele Lazzeri, and Francesco Mauri
Phys. Rev. Lett. 102, 196801 – Published 11 May 2009

Abstract

The current-voltage curve of metallic carbon nanotubes (CNTs) displays at high bias a sudden increase of the resistivity due to the scattering of electrons with phonons having an anomalously high population (hot phonons). Here, we show that it is possible to improve the electrical performances of metallic CNTs by C13 isotope enrichment. In fact, isotopic disorder creates additional channels for the hot-phonon deexcitation, reduces their population and, thus, the nanotube high-bias differential resistance. This is an extraordinary case where disorder improves the electronic transport.

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  • Received 7 July 2008

DOI:https://doi.org/10.1103/PhysRevLett.102.196801

©2009 American Physical Society

Authors & Affiliations

Niels Vandecasteele, Michele Lazzeri, and Francesco Mauri

  • IMPMC, Universités Paris 6 et 7, CNRS, IPGP, 140 rue de Lourmel, 75015 Paris, France

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Issue

Vol. 102, Iss. 19 — 15 May 2009

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