Negative-$U$ System of Carbon Vacancy in $4H$-SiC

Negative- $U$ System of Carbon Vacancy in $4 H$ -SiC

N. T. Son, X. T. Trinh, L. S. Løvlie, B. G. Svensson, K. Kawahara, J. Suda, T. Kimoto, T. Umeda, J. Isoya, T. Makino, T. Ohshima, and E. Janzén

Phys. Rev. Lett. 109, 187603 – Published 31 October 2012

Abstract

Using electron paramagnetic resonance (EPR), energy levels of the carbon vacancy ( $V_{C}$ ) in $4 H$ -SiC and its negative- $U$ properties have been determined. Combining EPR and deep-level transient spectroscopy we show that the two most common defects in as-grown $4 H$ -SiC—the $Z_{1 / 2}$ lifetime-limiting defect and the $E H_{7}$ deep defect—are related to the double acceptor ( $2 - | 0$ ) and single donor ( $0 | +$ ) levels of $V_{C}$ , respectively.

Received 23 August 2012

DOI:https://doi.org/10.1103/PhysRevLett.109.187603

Authors & Affiliations

N. T. Son¹, X. T. Trinh¹, L. S. Løvlie², B. G. Svensson², K. Kawahara³, J. Suda³, T. Kimoto³, T. Umeda⁴, J. Isoya⁵, T. Makino⁶, T. Ohshima⁶, and E. Janzén¹

¹Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden
²Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway
³Department of Electronic Science Engineering, Kyoto University, Nishikyo, Kyoto 615-8510, Japan
⁴Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
⁵Graduate School of Library, Information and Media Studies, University of Tsukuba, Tsukuba 305-8550, Japan
⁶Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan

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Vol. 109, Iss. 18 — 2 November 2012

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