Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes

D. O. Demchenko, I. C. Diallo, and M. A. Reshchikov
Phys. Rev. Lett. 110, 087404 – Published 21 February 2013

Abstract

We demonstrate that yellow luminescence often observed in both carbon-doped and pristine GaN is the result of electronic transitions via the CNON complex. In contrast to common isolated defects, the CNON complex is energetically favorable, and its calculated optical properties, such as absorption and emission energies, a zero phonon line, and the thermodynamic transition level, all show excellent agreement with measured luminescence data. Thus, by combining hybrid density functional theory and experimental measurements, we propose a solution to a long-standing problem of the GaN yellow luminescence.

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  • Received 11 September 2012

DOI:https://doi.org/10.1103/PhysRevLett.110.087404

© 2013 American Physical Society

Authors & Affiliations

D. O. Demchenko, I. C. Diallo, and M. A. Reshchikov

  • Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284, USA

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Vol. 110, Iss. 8 — 22 February 2013

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