Abstract
By combining x-ray excited Auger electron diffraction experiments and multiple scattering calculations we reveal a layer-resolved shift for the Mg Auger transition in MgO ultrathin films (4–6 Å) on Ag(001). This resolution is exploited to demonstrate the possibility of controlling Mg atom incorporation at the interface by exposing the MgO films to a Mg flux. A substantial reduction of the work function is observed during the exposition phase and reflects both band-offset variations at the interface and band bending effects in the oxide film.
- Received 10 April 2013
DOI:https://doi.org/10.1103/PhysRevLett.111.027601
© 2013 American Physical Society