Capacitance Observations of Landau Levels in Surface Quantization

M. Kaplit; J. N. Zemel

doi:10.1103/PhysRevLett.21.212

Capacitance Observations of Landau Levels in Surface Quantization

M. Kaplit and J. N. Zemel

Phys. Rev. Lett. 21, 212 – Published 22 July 1968

Abstract

Capacitance observations of Landau levels in a two-dimensional electron gas induced in the inversion layer on a (100) surface of $p$ -type silicon are reported. Evidence for surface quantization and the associated lifting of the spin and valley degeneracy are presented. An observed increase in the carrier threshold with increasing magnetic field is shown to be further evidence of surface quantization.

Received 13 May 1968

DOI:https://doi.org/10.1103/PhysRevLett.21.212

Authors & Affiliations

M. Kaplit^* and J. N. Zemel

The Moore School of Electrical Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104

^*Part of this work was performed while this author was a Guest Scientist at the National Magnet Laboratory which is supported at MIT by the U. S. Air Force Office of Scientific Research.