Evidence for A Sharp Absorption Edge in Amorphous Ge

T. M. Donovan, W. E. Spicer, and J. M. Bennett
Phys. Rev. Lett. 22, 1058 – Published 19 May 1969
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Abstract

A sharp optical absorption edge has been found at about 0.5 eV for amorphous Ge on a quartz substrate. The edge is comparable in sharpness with the direct edge of crystalline Ge. No evidence for tailing of the band edges into the forbidden band or for a high density of states in the forbidden band is found by these optical measurements. A new density determination gives a value of 4.54± 0.14 g/cm3.

  • Received 24 March 1969

DOI:https://doi.org/10.1103/PhysRevLett.22.1058

©1969 American Physical Society

Authors & Affiliations

T. M. Donovan and W. E. Spicer

  • Stanford University, Stanford, California 94305

J. M. Bennett

  • Michelson Laboratory, China Lake, California 93555

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Issue

Vol. 22, Iss. 20 — 19 May 1969

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