Effect of Electron-Exciton Collisions on the Free-Exciton Linewidth in Epitaxial GaAs

R. C. C. Leite, Jagdeep Shah, and J. P. Gordon
Phys. Rev. Lett. 23, 1332 – Published 8 December 1969
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Abstract

Broadening of the free-exciton emission band with increasing excitation intensity is observed in photoluminescence from GaAs. This effect is quantitatively accounted for by electron-exciton collisions.

  • Received 29 September 1969

DOI:https://doi.org/10.1103/PhysRevLett.23.1332

©1969 American Physical Society

Authors & Affiliations

R. C. C. Leite, Jagdeep Shah, and J. P. Gordon

  • Bell Telephone Laboratories, Holmdel, New Jersey 07733

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Vol. 23, Iss. 23 — 8 December 1969

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