Abstract
It is shown that the random-phase approximation static dielectric constant of a semiconductor with a conduction—valence-band degeneracy is nondivergent at zero momentum transfer for any concentration of ionized impurities (including the intrinsic material) so long as . The temperature dependence of the dielectric constant is calculated. It is shown that in the nondegenerate limit the dependence of the interband polarization is pure . Illustrative calculations are presented for .
- Received 24 September 1970
DOI:https://doi.org/10.1103/PhysRevLett.25.1658
©1970 American Physical Society