Phonon-Assisted Tunneling through Amorphous Germanium

F. R. Ladan and A. Zylbersztejn
Phys. Rev. Lett. 28, 1198 – Published 1 May 1972
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Abstract

We report the observation of electron tunneling between two metal electrodes separated by an amorphous germanium layer. Measurements of the derivative of the conductance with respect to the applied voltage yield the tunneling phonon density of states for amorphous germanium.

  • Received 13 March 1972

DOI:https://doi.org/10.1103/PhysRevLett.28.1198

©1972 American Physical Society

Authors & Affiliations

F. R. Ladan and A. Zylbersztejn*

  • Groupe de Physique des Solides de l'Ecole Normale Supérieure, Tour 23, Paris 5e, France

  • *Laboratory associated with the Centre National de la Recherche Scientifique.

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Issue

Vol. 28, Iss. 18 — 1 May 1972

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