Thermally stimulated ionic conductivity measurements have been made of sodium motion through Si${\mathrm{O}}_2$ grown thermally on silicon, and through thermal Si${\mathrm{O}}_2$ after bombardment by ${\mathrm{Ar}}^{+}$, ${\mathrm{B}}^{+}$, and ${\mathrm{P}}^{+}$ ions of 5 keV energy. Ion implantation of Si${\mathrm{O}}_2$ by glass-forming ions such as ${\mathrm{B}}^{+}$ or ${\mathrm{P}}^{+}$ creates traps at the Si${\mathrm{O}}_2$-Al interface that can markedly reduce ${\mathrm{Na}}^{+}$ motion in Si${\mathrm{O}}_2$.

• Received 2 July 1973

DOI:https://doi.org/10.1103/PhysRevLett.32.65