Electron-Hole-Pair Creation Energies in Semiconductors

R. C. Alig and S. Bloom
Phys. Rev. Lett. 35, 1522 – Published 1 December 1975
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Abstract

The rule that the electron-hole-pair creation energy is 3 times the semiconductor band gap is extended to include a large group of insulators. It is used, together with the free-particle approximation, to describe cathodoluminescent phosphor efficiencies and the escape probabilities of secondary electrons.

  • Received 16 September 1975

DOI:https://doi.org/10.1103/PhysRevLett.35.1522

©1975 American Physical Society

Authors & Affiliations

R. C. Alig and S. Bloom

  • RCA Laboratories, Princeton, New Jersey 08540

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Issue

Vol. 35, Iss. 22 — 1 December 1975

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