Tunneling of Spin-Polarized Electrons and Magnetoresistance in Granular Ni Films

J. S. Helman and B. Abeles
Phys. Rev. Lett. 37, 1429 – Published 22 November 1976
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Abstract

Films consisting of fine Ni grains (∼50 Å) dispersed in SiO2 exhibit a large negative magnetoresistance. The effect is accounted for by the field dependence of the magnetic exchange energy, associated with tunneling of electrons between neighboring grains whose magnetic moments are not parallel.

  • Received 24 May 1976

DOI:https://doi.org/10.1103/PhysRevLett.37.1429

©1976 American Physical Society

Authors & Affiliations

J. S. Helman

  • Centro de Investigacion del Instituto Politécnico Nacional, México 14, Distrito Federal, México

B. Abeles*

  • RCA Laboratories, Princeton, New Jersey 08540

  • *This work was done while the author was a visitor at the Centro de Investigación, México.

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Vol. 37, Iss. 21 — 22 November 1976

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