Fundamental Defect Centers in Glass: The Peroxy Radical in Irradiated, High-Purity, Fused Silica

E. J. Friebele; D. L. Griscom; M. Stapelbroek; R. A. Weeks

doi:10.1103/PhysRevLett.42.1346

Fundamental Defect Centers in Glass: The Peroxy Radical in Irradiated, High-Purity, Fused Silica

E. J. Friebele, D. L. Griscom, M. Stapelbroek, and R. A. Weeks

Phys. Rev. Lett. 42, 1346 – Published 14 May 1979

Abstract

A new fundamental radiation-induced defect in high-purity synthetic silica has been identified by electron-spin-resonance studies of ${}^{17}O$ -enriched Si $O_{2}$ as a peroxy radical $O_{2}^{-}$ bonded to one Si in the glass matrix. The precursors of these defects are envisioned to be ≡ Si-O-O-Si ≡ structures, some of which preexist in the silica, are formed in greater numbers during neutron bombardment, and which may release an electron either during irradiation or subsequent annealing.