Electron Tunneling Spectroscopy of High-Speed W-Ni Submicron Junctions

K. C. Liu, C. Davis, Jr., and A. Javan
Phys. Rev. Lett. 43, 785 – Published 10 September 1979
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Abstract

It is shown that electron tunneling in mechanically contacted high-speed submicron junction occurs in the presence of tens of kilobars of local stress. The observations are made under highly controlled conditions. Sharp tunneling resonances originating from a band-structure effect related to Ni ferromagnetism are observed and their stress and magnetic shifts studied.

  • Received 4 June 1979

DOI:https://doi.org/10.1103/PhysRevLett.43.785

©1979 American Physical Society

Authors & Affiliations

K. C. Liu, C. Davis, Jr., and A. Javan

  • Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

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Issue

Vol. 43, Iss. 11 — 10 September 1979

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