The megaelectronvolt ion-channeling technique has been applied to the study of the Ni-Si interface. The Ni-Si interface, prepared under UHV conditions at ambient temperature, shows an interfacial region containing ∼1×${10}^{16}$ atoms/${\mathrm{cm}}^2$ of nonregistered Si. A measurement of the temperature dependence of the interfacial reactivity emphasizes the kinetic nature of the Ni-Si interface and the importance of Schottky-barrier height measurements at low temperatures for meaningful comparison with abrupt metal-semicon-ductor interface models.

• Received 7 March 1980

DOI:https://doi.org/10.1103/PhysRevLett.45.120