Direct Measurement of the Bulk Density of Gap States in n-Type Hydrogenated Amorphous Silicon

J. D. Cohen, D. V. Lang, and J. P. Harbison
Phys. Rev. Lett. 45, 197 – Published 21 July 1980
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Abstract

The first direct measurement is reported of the bulk density of deep states in n-type a-Si: H. The spectral distribution is considerably different from previous field-effect and CV measurements and the overall density is much lower than has previously been reported. The states seen in these samples appear to be extrinsic and suggest that the extrapolated total density of deep states in pure a-Si: H may be less than 1015 cm3.

  • Received 21 February 1980

DOI:https://doi.org/10.1103/PhysRevLett.45.197

©1980 American Physical Society

Authors & Affiliations

J. D. Cohen, D. V. Lang, and J. P. Harbison

  • Bell Laboratories, Murray Hill, New Jersey 07974

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Vol. 45, Iss. 3 — 21 July 1980

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