Abstract
The width of the conduction- and valence-band tails in amorphous silicon hydride are inferred from time-of-flight measurements of the temperature dependence of the electron and hole drift mobilities, and a multiple-trapping model of dispersive transport.
- Received 22 December 1980
DOI:https://doi.org/10.1103/PhysRevLett.46.1425
©1981 American Physical Society