Electrical behaviors at two single-crystal metal-semiconductor interfaces are studied. Schottky-barrier heights of Ni${\mathrm{Si}}_2$ layers grown under ultrahigh-vacuum conditions on $n$-type Si(111) are found to be 0.65 and 0.79 eV for type-$A$ and type-$B$ epitaxial systems, respectively. These results are compared with the proposed theoretical models of Schottky barriers.

• Received 30 September 1983

DOI:https://doi.org/10.1103/PhysRevLett.52.461