Abstract
This Letter presents for the first time the observation of the resonant optical Stark effect in a semiconductor. The excitonic system of O is well suited to the investigation of this effect because of its rather large binding energy and well-resolved resonances at low temperatures. The mixing between the and excitons by the electric field of a tunable high-power C laser leads to drastic changes in the one-photon spectrum around the absorption line. Even details of the line shape are consistently described in terms of the frequency-dependent nonlinear susceptibility.
- Received 21 May 1985
DOI:https://doi.org/10.1103/PhysRevLett.55.1335
©1985 American Physical Society