Amorphous-to-Quasicrystalline Transformation in the Solid State

D. A. Lilienfeld, M. Nastasi, H. H. Johnson, D. G. Ast, and J. W. Mayer
Phys. Rev. Lett. 55, 1587 – Published 7 October 1985
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Abstract

Al84Mn16 multilayer films have been amorphized by room-temperature ion-beam irradiation. The amorphous phase was transformed into the quasicrystalline state through two routes: thermal and ion-beam-assisted thermal. The intensity of the quasicrystalline electron diffraction increases continuously with annealing between 270 and 350 °C. Ion irradiation of the amorphous phase produces a more complete set of icosahedral diffraction lines than thermal annealing.

  • Received 25 June 1985

DOI:https://doi.org/10.1103/PhysRevLett.55.1587

©1985 American Physical Society

Authors & Affiliations

D. A. Lilienfeld, M. Nastasi, H. H. Johnson, D. G. Ast, and J. W. Mayer

  • Department of Materials Science, Cornell University, Ithaca, New York 14853

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Issue

Vol. 55, Iss. 15 — 7 October 1985

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