The epitaxial growth of a Lennard-Jones system is studied as a function of substrate temperature $T_s$ and deposition rate. For all substrate temperatures the growth is into well-ordered layers. Layers become fully completed at intermediate $T_s$. At very low $T_s$ the layers contain defects and voids; however, the atoms are still arranged in close-packed islands within the layers.

• Received 24 May 1985

DOI:https://doi.org/10.1103/PhysRevLett.55.604