Multiple-Quantum NMR Study of Clustering in Hydrogenated Amorphous Silicon

J. Baum; K. K. Gleason; A. Pines; A. N. Garroway; J. A. Reimer

doi:10.1103/PhysRevLett.56.1377

Multiple-Quantum NMR Study of Clustering in Hydrogenated Amorphous Silicon

J. Baum, K. K. Gleason, A. Pines, A. N. Garroway, and J. A. Reimer

Phys. Rev. Lett. 56, 1377 – Published 31 March 1986

Abstract

Multiple-quantum nuclear-magnetic-resonance techniques are used to study the distribution of hydrogen in hydrogenated amorphous silicon. Using the fact that multiple-quantum excitation is limited by the size of the dipolar-coupled spin system, we show that the predominant bonding environment for hydrogen is a cluster of four to seven atoms. For device-quality films, the concentration of these cluster defects increases with increasing hydrogen content. At very high hydrogen content, the clusters are replaced with a continuous network of silicon-hydrogen bonds.

Received 6 November 1985

DOI:https://doi.org/10.1103/PhysRevLett.56.1377

Authors & Affiliations

J. Baum^*, K. K. Gleason^†, A. Pines^*, A. N. Garroway^‡, and J. A. Reimer^†

University of California, Berkeley, California 94720

^*Department of Chemistry; also Materials and Molecular Research Division, Lawrence Berkeley Laboratory, Berkeley, Cal. 94720.
^†Department of Chemical Engineering.
^‡Permanent address: Code 6120, Naval Research Laboratory, Washington, D.C. 20375.